| PART |
Description |
Maker |
| K4T1G084QQ |
(K4T1G044QQ - K4T1G164QQ) 1Gb A-die DDR2 SDRAM Specification
|
Samsung semiconductor
|
| WV3EG265M72EFSU262D4S WV3EG265M72EFSU265D4SG |
1GB - 2x64Mx72 DDR SDRAM, UNBUFFERED, PLL, FBGA 1GB 2x64Mx72 DDR内存，无缓冲，锁相环，FBGA封装
|
Square D by Schneider Electric
Diodes, Inc.
|
| W3EG72125S335AJD3 W3EG72125S202JD3 W3EG72125S263AJ |
1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL 1GB 2x64Mx72 ECC的DDR SDRAM的注册瓦锁相
|
Amphenol, Corp.
Toshiba, Corp.
|
| S30MS512P25BAW000 S30MS512P25BAW003 S30MS512P25BFW |
32M X 16 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit??Technology
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 128M X 8 FLASH 1.8V PROM, 25 ns, PBGA137
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit?/a> Technology
1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology
|
SPANSION LLC
Spansion, Inc.
|
| HY5PS1G421LM-Y5 HY5PS1G821LM-Y5 HY5PS1G421LM-Y6 HY |
DDR2 SDRAM - 1Gb
|
Hynix Semiconductor
|
| TS1GJF110 |
1GB USB2.0 JetFlash
|
Transcend Information. Inc.
|
| TS1GJFV33 |
1GB USB2.0 JetFlash鈩33
|
Transcend Information. Inc.
|
| H5TQ1G63DFR-12C H5TQ1G63DFR-N0C H5TQ1G63DFR-11C |
1Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| TS1GJF160 |
1GB USB2.0 JetFlash?
|
Transcend Information. ...
|
| HY5PS1G431CFP HY5PS1G431CFP-C4 HY5PS1G431CFP-E3 HY |
1Gb DDR2 SDRAM
|
HYNIX[Hynix Semiconductor]
|
